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1 Ergebnisse
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A Novel Single Event Upset Tolerant 12T Memory Cell for Aer..:
, In:
2020 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
,
Dohar, Suraj
;
Siddharth, R. K.
;
Vasantha, M. H.
. - p. 48-53 , 2020
Link:
https://doi.org/10.1109/ISVLSI49217.2020.00019
RT T1
2020 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
: T1
A Novel Single Event Upset Tolerant 12T Memory Cell for Aerospace Applications
UL https://suche.suub.uni-bremen.de/peid=ieee-9155060&Exemplar=1&LAN=DE A1 Dohar, Suraj A1 Siddharth, R. K. A1 Vasantha, M. H. A1 Kumar Y. B., Nithin YR 2020 SN 2159-3477 K1 Computer architecture K1 Microprocessors K1 MOSFET K1 SRAM cells K1 Single event upsets K1 Transient analysis K1 Radiation-hardened designs K1 static noise margin (SNM) K1 N-curve metrics K1 single event upset (SEU) K1 leakage power SP 48 OP 53 LK http://dx.doi.org/https://doi.org/10.1109/ISVLSI49217.2020.00019 DO https://doi.org/10.1109/ISVLSI49217.2020.00019 SF ELIB - SuUB Bremen
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