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1 Ergebnisse
1
Impact of Trapezoidal Channel in Double-Gate Tunnel Field E..:
, In:
2020 17th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)
,
Roy, Abhishek
;
Goswami, Bijoy
;
Dey, Ujjwal
... - p. 380-383 , 2020
Link:
https://doi.org/10.1109/ECTI-CON49241.2020.9158233
RT T1 <cTitle>2020 17th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)</cTitle>: T1 <Title>Impact of Trapezoidal Channel in Double-Gate Tunnel Field Effect Transistor on Ambipolar Conduction for Ultra Low-Power Application</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9158233&Exemplar=1&LAN=DE A1 Roy, Abhishek A1 Goswami, Bijoy A1 Dey, Ujjwal A1 Gayen, Debasish A1 Reja, Wasim A1 Sarkar, Subir Kumar YR 2020 K1 TFETs K1 Logic gates K1 Tunneling K1 Ions K1 Electric potential K1 Telecommunications K1 Low power K1 TDG-TFET K1 Ion/Ioff K1 subthreshold swing(SS) K1 Electric-Field K1 Potential SP 380 OP 383 LK http://dx.doi.org/https://doi.org/10.1109/ECTI-CON49241.2020.9158233 DO https://doi.org/10.1109/ECTI-CON49241.2020.9158233 SF ELIB - SuUB Bremen
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