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1 Ergebnisse
1
A 10nm SRAM Design using Gate-Modulated Self-Collapse Write..:
, In:
2020 IEEE Symposium on VLSI Circuits
,
Guo, Zheng
;
Wiedemer, Jami
;
Kim, Yusung
... - p. 1-2 , 2020
Link:
https://doi.org/10.1109/VLSICircuits18222.2020.9162782
RT T1
2020 IEEE Symposium on VLSI Circuits
: T1
A 10nm SRAM Design using Gate-Modulated Self-Collapse Write Assist Enabling 175mV VMIN Reduction with Negligible Power Overhead
UL https://suche.suub.uni-bremen.de/peid=ieee-9162782&Exemplar=1&LAN=DE A1 Guo, Zheng A1 Wiedemer, Jami A1 Kim, Yusung A1 Ramamoorthy, Prithvee Sundararajan A1 Sathyaprasad, Prateeksha Bindiganavile A1 Shridharan, Smita A1 Kim, Daeyeon A1 Karl, Eric YR 2020 SN 2158-5636 K1 Frequency measurement K1 Random access memory K1 Logic gates K1 Voltage control K1 Size measurement K1 Low voltage SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSICircuits18222.2020.9162782 DO https://doi.org/10.1109/VLSICircuits18222.2020.9162782 SF ELIB - SuUB Bremen
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