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1 Ergebnisse
1
Electrical characterization of n-type cylindrical gate all ..:
, In:
2020 IEEE International Conference on Semiconductor Electronics (ICSE)
,
Alias, Nurul Ezaila
;
Sule, Mohammed Adamu
;
Tan, Michael Loong Peng
... - p. 13-16 , 2020
Link:
https://doi.org/10.1109/ICSE49846.2020.9166886
RT T1 <cTitle>2020 IEEE International Conference on Semiconductor Electronics (ICSE)</cTitle>: T1 <Title>Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with SiO2 and high-k dielectrics</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9166886&Exemplar=1&LAN=DE A1 Alias, Nurul Ezaila A1 Sule, Mohammed Adamu A1 Tan, Michael Loong Peng A1 Hamzah, Afiq A1 Saidu, Kabiru Adamu A1 Mohammed, Sanusi A1 Aminu, Tijjani Kuda A1 Shehu, Adamu YR 2020 K1 Logic gates K1 Hafnium compounds K1 Dielectrics K1 High-k dielectric materials K1 Capacitance K1 Leakage currents K1 Transistors K1 junctionless transistor K1 nanowire K1 gate capacitance K1 high-k K1 dielectric constant SP 13 OP 16 LK http://dx.doi.org/https://doi.org/10.1109/ICSE49846.2020.9166886 DO https://doi.org/10.1109/ICSE49846.2020.9166886 SF ELIB - SuUB Bremen
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