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A comparative study of oxidized spacer trench and micro-pat..:
, In:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Philippou, Alexander
;
Baburske, Roman
;
Arnold, Thorsten
... - p. 459-461 , 2020
Link:
https://doi.org/10.1109/ISPSD46842.2020.9170037
RT T1 <cTitle>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A comparative study of oxidized spacer trench and micro-pattern trench concepts for 1200 V IGBTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9170037&Exemplar=1&LAN=DE A1 Philippou, Alexander A1 Baburske, Roman A1 Arnold, Thorsten A1 Imperiale, Ilaria A1 Griebl, Erich A1 Thees, Hans-Jurgen A1 Ross, Philipp A1 Wolter, Frank A1 Niedernostheide, Franz-Josef YR 2020 SN 1946-0201 K1 side gate K1 narrow mesa K1 IGBT K1 GPD SP 459 OP 461 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD46842.2020.9170037 DO https://doi.org/10.1109/ISPSD46842.2020.9170037 SF ELIB - SuUB Bremen
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