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Analysis of 1.2 kV SiC SWITCH-MOS after Short-circuit Stres:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Okawa, Masataka ; Kanamori, Taiga ; Aiba, Ruito... - p. 74-77 , 2020
Link: https://doi.org/10.1109/ISPSD46842.2020.9170050