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Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Xin, Yajie ; Chen, Wanjun ; Sun, Ruize... - p. 317-320 , 2020
Link: https://doi.org/10.1109/ISPSD46842.2020.9170063