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1 Ergebnisse
1
Analysis and Design Considerations of Low-voltage Trench MO..:
, In:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Spetik, Radim
;
Fujiwara, Shuji
;
Ho, Ihsiu
... - p. 557-560 , 2020
Link:
https://doi.org/10.1109/ISPSD46842.2020.9170095
RT T1 <cTitle>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9170095&Exemplar=1&LAN=DE A1 Spetik, Radim A1 Fujiwara, Shuji A1 Ho, Ihsiu A1 Hao, Jifa A1 Arora, Aakash A1 Blaho, Matej A1 Seliga, Ladislav A1 Malousek, Roman A1 Kudrna, Filip A1 Menon, Santosh A1 Greenwood, B. A1 Thomason, M. A1 Williams, B. YR 2020 SN 1946-0201 K1 Trench MOSFET K1 inductive switching clamped / unclamped K1 thermal runaway SP 557 OP 560 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD46842.2020.9170095 DO https://doi.org/10.1109/ISPSD46842.2020.9170095 SF ELIB - SuUB Bremen
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