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1 Ergebnisse
1
Packaging Development for a 1200V SiC BiDFET Switch Using H..:
, In:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Mehrotra, Utkarsh
;
Cheng, Tzu-Hsuan
;
Kanale, Ajit
... - p. 396-399 , 2020
Link:
https://doi.org/10.1109/ISPSD46842.2020.9170116
RT T1 <cTitle>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Packaging Development for a 1200V SiC BiDFET Switch Using Highly Thermally Conductive Organic Epoxy Laminate</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9170116&Exemplar=1&LAN=DE A1 Mehrotra, Utkarsh A1 Cheng, Tzu-Hsuan A1 Kanale, Ajit A1 Agarwal, Aditi A1 Han, Kijeong A1 Baliga, B. Jayant A1 Bhattacharya, Subhashish A1 Hopkins, Douglas C. YR 2020 SN 1946-0201 K1 Silicon Carbide K1 Bi-directional switch K1 BiDFET K1 MOSFET K1 Low Voltage Drop K1 4H-SiC K1 organic substrate K1 power packaging K1 Epoxy-resin substrate K1 ERCD SP 396 OP 399 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD46842.2020.9170116 DO https://doi.org/10.1109/ISPSD46842.2020.9170116 SF ELIB - SuUB Bremen
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