I agree that this site is using cookies. You can find further informations here.
X
Merkliste 
 1 Ergebnisse 
 
1

Highly Reliable GaN-MOSFETs with High Channel Mobility Gate..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kajiwara, Y. ; Shindome, A. ; Mukai, A.... - p. 302-305 , 2020
Link: https://doi.org/10.1109/ISPSD46842.2020.9170119