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A Study of On-state Breakdown Decreasing of nLDMOSFETs by H..:
, In:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Mori, Takahiro
;
Yamaguchi, Tomonari
;
Kamino, Takeshi
... - p. 30-33 , 2020
Link:
https://doi.org/10.1109/ISPSD46842.2020.9170123
RT T1 <cTitle>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A Study of On-state Breakdown Decreasing of nLDMOSFETs by Hole Current Increase Depending on Drain Pulse Rise Time</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9170123&Exemplar=1&LAN=DE A1 Mori, Takahiro A1 Yamaguchi, Tomonari A1 Kamino, Takeshi A1 Tsuruta, Junji A1 Okushima, Mototsugu A1 Sayama, Hirokazu A1 Iizuka, Koji YR 2020 SN 1946-0201 K1 nLDMOSFET K1 p-type RESURF layer K1 on-state breakdown SP 30 OP 33 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD46842.2020.9170123 DO https://doi.org/10.1109/ISPSD46842.2020.9170123 SF ELIB - SuUB Bremen
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