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1 Ergebnisse
1
Remarkable Breakdown Voltage on AlN/AlGaN/AlN double hetero..:
, In:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Abid, I.
;
Kabouche, R.
;
Medjdoub, F.
... - p. 310-312 , 2020
Link:
https://doi.org/10.1109/ISPSD46842.2020.9170170
RT T1 <cTitle>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9170170&Exemplar=1&LAN=DE A1 Abid, I. A1 Kabouche, R. A1 Medjdoub, F. A1 Besendorfer, S. A1 Meissner, E. A1 Derluyn, J. A1 Degroote, S. A1 Germain, M. A1 Miyake, H. YR 2020 SN 1946-0201 K1 Photonic band gap K1 Electric breakdown K1 HEMTs K1 Wide band gap semiconductors K1 Transistors K1 Leakage currents K1 III-V semiconductor materials K1 AlGaN channel K1 High-Electron-Mobility Transistor (HEMT) K1 Ultra-Wide Band Gap K1 AlN SP 310 OP 312 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD46842.2020.9170170 DO https://doi.org/10.1109/ISPSD46842.2020.9170170 SF ELIB - SuUB Bremen
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