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1 Ergebnisse
1
Polarization effects in ferroelectric gate AlGaN/GaN High E..:
, In:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhou, R.
;
Li, L.
;
Zhao, W.
... - p. 329-332 , 2020
Link:
https://doi.org/10.1109/ISPSD46842.2020.9170173
RT T1 <cTitle>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9170173&Exemplar=1&LAN=DE A1 Zhou, R. A1 Li, L. A1 Zhao, W. A1 Liao, Z. A1 Nguyen, M. D. A1 Nunnenkamp, M. A1 Houwman, E. P. A1 Koster, G. A1 Rijnders, A. J. H. M. A1 Gravesteijn, D. J. A1 Hueting, R. J. E. YR 2020 SN 1946-0201 K1 Polarization effect K1 PZT K1 2DEG K1 ferroelectric gate K1 AlGaN/GaN HEMTs SP 329 OP 332 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD46842.2020.9170173 DO https://doi.org/10.1109/ISPSD46842.2020.9170173 SF ELIB - SuUB Bremen
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