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1 Ergebnisse
1
High Voltage Vertical GaN-on-GaN Schottky Barrier Diode wit..:
, In:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Yin, Ruiyuan
;
Li, Yue
;
Wen, Cheng P.
... - p. 298-301 , 2020
Link:
https://doi.org/10.1109/ISPSD46842.2020.9170190
RT T1
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect
UL https://suche.suub.uni-bremen.de/peid=ieee-9170190&Exemplar=1&LAN=DE A1 Yin, Ruiyuan A1 Li, Yue A1 Wen, Cheng P. A1 Fu, Yunyi A1 Hao, Yilong A1 Wang, Maojun A1 Shen, Bo YR 2020 SN 1946-0201 K1 GaN vertical Schottky barrier diode K1 high energy fluorine ion implantation K1 edge termination K1 quasi-junction-barrier-Schottky diode K1 space charge induced field modulation K1 high breakdwon voltage SP 298 OP 301 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD46842.2020.9170190 DO https://doi.org/10.1109/ISPSD46842.2020.9170190 SF ELIB - SuUB Bremen
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