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NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-b..:
, In:
2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)
,
Cheng, Wei-Chun
;
Chen, Shuo-Han
;
Chang, Yuan-Hao
... - p. 1-6 , 2020
Link:
https://doi.org/10.1109/NVMSA51238.2020.9188172
RT T1
2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)
: T1
NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN
UL https://suche.suub.uni-bremen.de/peid=ieee-9188172&Exemplar=1&LAN=DE A1 Cheng, Wei-Chun A1 Chen, Shuo-Han A1 Chang, Yuan-Hao A1 Chen, Kuan-Hsun A1 Chen, Jian-Jia A1 Chen, Tseng-Yi A1 Yang, Ming-Chang A1 Shih, Wei-Kuan YR 2020 SN 2575-257X K1 Random access memory K1 Nonvolatile memory K1 Transistors K1 Magnetic tunneling K1 Computer science K1 Torque K1 Space vehicles K1 NAND-SPIN K1 FTL K1 NAND Flash K1 NVRAM SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/NVMSA51238.2020.9188172 DO https://doi.org/10.1109/NVMSA51238.2020.9188172 SF ELIB - SuUB Bremen
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