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1 Ergebnisse
1
Gradual Resistive Switching in Electron Beam Irradiated ReS..:
, In:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Li, Sifan
;
Li, Bochang
;
Feng, Xuewei
... - p. 157-158 , 2020
Link:
https://doi.org/10.1109/VLSI-TSA48913.2020.9203618
RT T1
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
: T1
Gradual Resistive Switching in Electron Beam Irradiated ReS2 Transistor and its Application as Electronic Synapse
UL https://suche.suub.uni-bremen.de/peid=ieee-9203618&Exemplar=1&LAN=DE A1 Li, Sifan A1 Li, Bochang A1 Feng, Xuewei A1 Chen, Li A1 Li, Yesheng A1 Huang, Li A1 Gong, Xiao A1 Fong, Xuanyao A1 Ang, Kah-Wee YR 2020 K1 Electron beams K1 Switches K1 Transistors K1 Sulfur K1 Synapses K1 Optimization K1 Switching circuits SP 157 OP 158 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA48913.2020.9203618 DO https://doi.org/10.1109/VLSI-TSA48913.2020.9203618 SF ELIB - SuUB Bremen
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