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1 Ergebnisse
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Investigation of the Impact of Internal Metal Gate – From M..:
, In:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Lee, Shen-Yang
;
Chen, Han-Wei
;
Chung, Chun-Chih
... - p. 124-125 , 2020
Link:
https://doi.org/10.1109/VLSI-TSA48913.2020.9203642
RT T1
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
: T1
Investigation of the Impact of Internal Metal Gate – From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs
UL https://suche.suub.uni-bremen.de/peid=ieee-9203642&Exemplar=1&LAN=DE A1 Lee, Shen-Yang A1 Chen, Han-Wei A1 Chung, Chun-Chih A1 Shen, Chiuan-Huei A1 Kuo, Po-Yi A1 Huang, Yu-En A1 Chen, Hsin-Yu A1 Chao, Tien-Sheng YR 2020 K1 Gallium arsenide K1 Capacitors K1 Logic gates K1 Tin K1 Iron K1 Current measurement K1 Crystallization SP 124 OP 125 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA48913.2020.9203642 DO https://doi.org/10.1109/VLSI-TSA48913.2020.9203642 SF ELIB - SuUB Bremen
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