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Formation of Ferroelectric Y-doped HfO2 though Atomic Layer..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Mizutani, K. ; Lin, Y.-W. ; Hoshii, T.... - p. 70-71 , 2020
Link: https://doi.org/10.1109/VLSI-TSA48913.2020.9203669