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3D Stackable Via RRAM Cells by Cu BEOL Process in FinFET CM..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Lin, Cheng-Jun ; Lee, Wang-Yi ; Lin, Chrong-Jung. - p. 31-32 , 2020
Link: https://doi.org/10.1109/VLSI-TSA48913.2020.9203679