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Ferroelectric HfZrO₂ FETs for Emerging Technologies:
, In:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Lee, Min-Hung
- p. 148-148 , 2020
Link:
https://doi.org/10.1109/VLSI-TSA48913.2020.9203683
RT T1 <cTitle>2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)</cTitle>: T1 <Title>Ferroelectric HfZrO₂ FETs for Emerging Technologies</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9203683&Exemplar=1&LAN=DE A1 Lee, Min-Hung YR 2020 SP 148 OP 148 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA48913.2020.9203683 DO https://doi.org/10.1109/VLSI-TSA48913.2020.9203683 SF ELIB - SuUB Bremen
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