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1 Ergebnisse
1
Carrier Transport In Multilayer n-MoSe2 And p-Germanium Het..:
, In:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Uddin, Wasi
;
Dhyani, Veerendra
;
Ahmad, Gufran
. - p. 60-61 , 2020
Link:
https://doi.org/10.1109/VLSI-TSA48913.2020.9203706
RT T1
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
: T1
Carrier Transport In Multilayer n-MoSe2 And p-Germanium Heterojunction Back Gated Field Effect Transistors
UL https://suche.suub.uni-bremen.de/peid=ieee-9203706&Exemplar=1&LAN=DE A1 Uddin, Wasi A1 Dhyani, Veerendra A1 Ahmad, Gufran A1 Das, Samaresh YR 2020 K1 Heterojunctions K1 Logic gates K1 Field effect transistors K1 Temperature dependence K1 Temperature K1 Charge carrier processes K1 Thermionic emission SP 60 OP 61 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA48913.2020.9203706 DO https://doi.org/10.1109/VLSI-TSA48913.2020.9203706 SF ELIB - SuUB Bremen
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