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1 Ergebnisse
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Giant Electroresistance Switching of Two-dimensional Ferroe..:
, In:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Lee, Ko-Chun
;
Retamal, Jose Ramon Duran
;
Xue, Fei
... - p. 88-89 , 2020
Link:
https://doi.org/10.1109/VLSI-TSA48913.2020.9203707
RT T1
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
: T1
Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3 on p+-Si
UL https://suche.suub.uni-bremen.de/peid=ieee-9203707&Exemplar=1&LAN=DE A1 Lee, Ko-Chun A1 Retamal, Jose Ramon Duran A1 Xue, Fei A1 Cheng, Bin A1 Tang, Hao-Ling A1 Chiu, Ming-Hui A1 Hu, Wei-Jin A1 Wu, Chih-I A1 Chen, Mei-Hsin A1 Li, Lain-Jong A1 Lien, Chen-Hsin A1 He, Jr-Hau YR 2020 K1 Electric potential K1 Hysteresis K1 Switches K1 Resistance K1 STEM K1 Two dimensional displays K1 Gold SP 88 OP 89 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA48913.2020.9203707 DO https://doi.org/10.1109/VLSI-TSA48913.2020.9203707 SF ELIB - SuUB Bremen
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