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1 Ergebnisse
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Fabrication and device characterization of large linear dyn..:
, In:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Chen, Fang-Ming
;
Wang, I-Jung
;
Wang, Ding-Yeong
... - p. 104-105 , 2020
Link:
https://doi.org/10.1109/VLSI-TSA48913.2020.9203712
RT T1 <cTitle>2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)</cTitle>: T1 <Title>Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9203712&Exemplar=1&LAN=DE A1 Chen, Fang-Ming A1 Wang, I-Jung A1 Wang, Ding-Yeong A1 Yang, Shan-Yi A1 Hsin, Yu-Chen A1 Chang, Yao-Jen A1 Lee, Hsin-Han A1 Chen, Guan-Long A1 Kuo, Yi-Ching A1 Su, Yi-Hui A1 Rahaman, Sk. Ziaur A1 Wei, Jeng-Hua A1 Li, Sih-Han A1 Sheu, Shyh-Shyuan A1 Lo, Wei-Chung A1 Chang, Shih-Chieh A1 Wu, Chih-I YR 2020 K1 Sensor phenomena and characterization K1 Tunneling magnetoresistance K1 Magnetic sensors K1 Etching K1 Magnetic tunneling K1 Magnetic fields SP 104 OP 105 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA48913.2020.9203712 DO https://doi.org/10.1109/VLSI-TSA48913.2020.9203712 SF ELIB - SuUB Bremen
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