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1 Ergebnisse
1
Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS af..:
, In:
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)
,
Shu, Lei
;
Zhao, Yuan-Fu
;
Wang, Liang
... - p. 1-4 , 2019
Link:
https://doi.org/10.1109/ICREED49760.2019.9205166
RT T1 <cTitle>2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)</cTitle>: T1 <Title>Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9205166&Exemplar=1&LAN=DE A1 Shu, Lei A1 Zhao, Yuan-Fu A1 Wang, Liang A1 Wang, Tian-Qi A1 Zhou, Xin A1 Yuan, Zhang-Yi'an A1 Zhao, Kai A1 Huo, Ming-Xue A1 Liu, Chao-Ming A1 Ma, Guo-Liang A1 Zhang, Yan-Qing A1 Qi, Chun-Hua A1 Qiao, Ming A1 Chen, Wei-Ping YR 2019 K1 Radiation effects K1 Electric fields K1 Impact ionization K1 Semiconductor device measurement K1 Analytical models K1 Silicon-on-insulator K1 Electric variables K1 TID K1 LDMOS K1 radiation effects K1 TCAD simulations SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICREED49760.2019.9205166 DO https://doi.org/10.1109/ICREED49760.2019.9205166 SF ELIB - SuUB Bremen
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