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1 Ergebnisse
1
5 Model analysis for effects of spatial and energy profiles..:
, In:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Hamano, Takashi
;
Urabe, Keiichiro
;
Eriguchi, Koji
- p. 125-127 , 2020
Link:
https://doi.org/10.23919/SISPAD49475.2020.9241621
RT T1 <cTitle>2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>5 Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9241621&Exemplar=1&LAN=DE A1 Hamano, Takashi A1 Urabe, Keiichiro A1 Eriguchi, Koji YR 2020 SN 1946-1577 K1 Performance evaluation K1 Semiconductor device modeling K1 Process control K1 Silicon K1 Plasmas K1 Semiconductor process modeling K1 Substrates K1 plasma process K1 plasma process-induced defect K1 defectprofile K1 density-of-state K1 Si K1 MOSFET SP 125 OP 127 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD49475.2020.9241621 DO https://doi.org/10.23919/SISPAD49475.2020.9241621 SF ELIB - SuUB Bremen
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