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Modeling and Simulation of Si IGBTs:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),

Shigyo, N. ; Watanabe, M. ; Kakushima, K.... - p. 129-132 , 2020

Link: https://doi.org/10.23919/SISPAD49475.2020.9241627

RT 
T1 <cTitle>2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Modeling and Simulation of Si IGBTs</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9241627&Exemplar=1&LAN=DE
				
A1 Shigyo, N.
A1 Watanabe, M.
A1 Kakushima, K.
A1 Hoshii, T.
A1 Furukawa, K.
A1 Nakajima, A.
A1 Satoh, K.
A1 Matsudai, T.
A1 Saraya, T.
A1 Takakura, T.
A1 Itou, K.
A1 Fukui, M.
A1 Suzuki, S.
A1 Takeuchi, K.
A1 Muneta, I.
A1 Wakabayashi, H.
A1 Nishizawa, S.
A1 Tsutsui, K.
A1 Hiramoto, T.
A1 Ohashi, H.
A1 Iwai, H.
YR 2020
SN 1946-1577
K1 Insulated gate bipolar transistors
K1 Solid modeling
K1 Semiconductor device measurement
K1 Scattering
K1 Predictive models
K1 Silicon
K1 Semiconductor process modeling
K1 IGBT
K1 trench-gate
K1 TCAD simulation
K1 carrier-carrier scattering
K1 three-dimension current flow
K1 injection enhancement effect
SP 129
OP 132
LK http://dx.doi.org/https://doi.org/10.23919/SISPAD49475.2020.9241627
DO https://doi.org/10.23919/SISPAD49475.2020.9241627
SF ELIB - SuUB Bremen

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