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1 Ergebnisse
1
Nanoscale FET: How To Make Atomistic Simulation Versatile, ..:
, In:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Blaise, Philippe
;
Kapoor, Udita
;
Townsend, Mark
... - p. 249-252 , 2020
Link:
https://doi.org/10.23919/SISPAD49475.2020.9241651
RT T1
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below
UL https://suche.suub.uni-bremen.de/peid=ieee-9241651&Exemplar=1&LAN=DE A1 Blaise, Philippe A1 Kapoor, Udita A1 Townsend, Mark A1 Guichard, Eric A1 Charles, James A1 Lemus, Daniel A1 Kubis, Tillmann YR 2020 SN 1946-1577 K1 Visualization K1 Field effect transistors K1 Scattering K1 Predictive models K1 Tools K1 Nanoscale devices K1 Semiconductor process modeling K1 Atomistic K1 Simulation K1 CMOS K1 FET K1 NEGF K1 Tight-Binding SP 249 OP 252 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD49475.2020.9241651 DO https://doi.org/10.23919/SISPAD49475.2020.9241651 SF ELIB - SuUB Bremen
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