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Simulation of gated GaAs-AlGaAs resonant tunneling diodes f..:
, In:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Georgiev, V. P.
;
Sengupta, A.
;
Maciazek, P.
... - p. 241-244 , 2020
Link:
https://doi.org/10.23919/SISPAD49475.2020.9241677
RT T1 <cTitle>2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9241677&Exemplar=1&LAN=DE A1 Georgiev, V. P. A1 Sengupta, A. A1 Maciazek, P. A1 Badami, O. A1 Medina-Bailon, C. A1 Dutta, T. A1 Adamu-Lema, F. A1 Asenov, A. YR 2020 SN 1946-1577 K1 Potential well K1 Logic gates K1 Software K1 Nanoscale devices K1 Semiconductor process modeling K1 Semiconductor diodes K1 Resonant tunneling devices K1 nanowire K1 resonant tunneling diodes K1 quantum device simulator K1 physically terahertz applications SP 241 OP 244 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD49475.2020.9241677 DO https://doi.org/10.23919/SISPAD49475.2020.9241677 SF ELIB - SuUB Bremen
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