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MOS-like approach for compact modeling of High-Electron-Mob..:
, In:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Vaysset, Adrien
;
Martinie, Sebastien
;
Triozon, Francois
... - p. 221-224 , 2020
Link:
https://doi.org/10.23919/SISPAD49475.2020.9241679
RT T1 <cTitle>2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>MOS-like approach for compact modeling of High-Electron-Mobility Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9241679&Exemplar=1&LAN=DE A1 Vaysset, Adrien A1 Martinie, Sebastien A1 Triozon, Francois A1 Rozeau, Olivier A1 Jaud, Marie-Anne A1 Escoffier, Rene A1 Poiroux, Thierry YR 2020 SN 1946-1577 K1 Fitting K1 Potential well K1 HEMTs K1 Data models K1 Semiconductor process modeling K1 Numerical models K1 Mathematical model K1 Power device K1 GaN K1 HEMT K1 compact model K1 SPICE SP 221 OP 224 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD49475.2020.9241679 DO https://doi.org/10.23919/SISPAD49475.2020.9241679 SF ELIB - SuUB Bremen
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