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High-sigma analysis of DRAM write and retention performance..:
, In:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Amoroso, Salvatore Maria
;
Lee, Jaehyun
;
Brown, Andrew R.
... - p. 35-38 , 2020
Link:
https://doi.org/10.23919/SISPAD49475.2020.9241690
RT T1 <cTitle>2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>High-sigma analysis of DRAM write and retention performance: a TCAD-to-SPICE approach</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9241690&Exemplar=1&LAN=DE A1 Amoroso, Salvatore Maria A1 Lee, Jaehyun A1 Brown, Andrew R. A1 Asenov, Plamen A1 Lin, Xi-Wei A1 Moroz, Victor A1 Yang, Thomas YR 2020 SN 1946-1577 K1 Fluctuations K1 Capacitors K1 Random access memory K1 Data models K1 Semiconductor process modeling K1 Integrated circuit reliability K1 Integrated circuit modeling K1 DRAM K1 leakage K1 retention time K1 DTCO K1 TCAD SP 35 OP 38 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD49475.2020.9241690 DO https://doi.org/10.23919/SISPAD49475.2020.9241690 SF ELIB - SuUB Bremen
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