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1 Ergebnisse
1
ESD-capability Influences of UHV Circular nLDMOS Transistor..:
, In:
2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
,
Lan, Tien-Yu
;
Chen, Shen-Li
;
Fan, Sheng-Kai
... - p. 1-2 , 2020
Link:
https://doi.org/10.1109/ICCE-Taiwan49838.2020.9258042
RT T1 <cTitle>2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)</cTitle>: T1 <Title>ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9258042&Exemplar=1&LAN=DE A1 Lan, Tien-Yu A1 Chen, Shen-Li A1 Fan, Sheng-Kai A1 Lin, Po-Lin A1 Zhou, Yu-Jie A1 Hong, Shi-Zhe A1 Chen, Hung-Wei YR 2020 SN 2575-8284 K1 Modulation K1 Electron traps K1 Shape K1 Layout K1 Three-dimensional displays K1 Voltage measurement K1 Current density K1 Electrostatic discharge(ESD) K1 n-channel lateral-diffused MOSFET(nLDMOS) K1 Silicon controlled rectifier(SCR) K1 Human body Model(HBM) K1 Ultra-high voltage(UHV) SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/ICCE-Taiwan49838.2020.9258042 DO https://doi.org/10.1109/ICCE-Taiwan49838.2020.9258042 SF ELIB - SuUB Bremen
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