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1 Ergebnisse
1
Improving the ESD Robustness of an Ultra-high Voltage nLDMO..:
, In:
2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
,
Lin, Po-Lin
;
Chen, Shen-Li
;
Fan, Sheng-Kai
... - p. 1-2 , 2020
Link:
https://doi.org/10.1109/ICCE-Taiwan49838.2020.9258045
RT T1
2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
: T1
Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode
UL https://suche.suub.uni-bremen.de/peid=ieee-9258045&Exemplar=1&LAN=DE A1 Lin, Po-Lin A1 Chen, Shen-Li A1 Fan, Sheng-Kai A1 Lan, Tien-Yu A1 Zhou, Yu-Jie A1 Hong, Shi-Zhe YR 2020 SN 2575-8284 K1 Schottky diodes K1 Electrostatic discharges K1 Layout K1 Breakdown voltage K1 Testing K1 Switched mode power supplies K1 Market research K1 Electrostatic discharge (ESD) K1 Human body model (HBM) K1 Schottky diode K1 Transmission-line pulse (TLP) K1 Ultra-high voltage lateral-diffused MOSFET (UHV LDMOS) SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/ICCE-Taiwan49838.2020.9258045 DO https://doi.org/10.1109/ICCE-Taiwan49838.2020.9258045 SF ELIB - SuUB Bremen
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