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Analysis of the Effects of Boron Transient Enhanced Diffusi..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),

Fujii, Shuntaro ; Takeuchi, Hideki ; Morita, Soichi... - p. 1-4 , 2020

Link: https://doi.org/10.1109/IPFA49335.2020.9260584

RT 
T1 <cTitle>2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)</cTitle>: T1 <Title>Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9260584&Exemplar=1&LAN=DE
				
A1 Fujii, Shuntaro
A1 Takeuchi, Hideki
A1 Morita, Soichi
A1 Yagi, Tatsushi
A1 Hamada, Shohei
A1 Sakamoto, Toshiro
A1 Kawaguchi, Shinji
A1 Ishigami, Naoki
A1 Okamoto, Atsushi
A1 Ikeda, Shuji
A1 Wong, Hiu-Yung
A1 Mears, Robert J.
A1 Miyazaki, Tsutomu
YR 2020
SN 1946-1550
K1 Silicon
K1 Epitaxial growth
K1 Boron
K1 MOSFET
K1 Logic gates
K1 Atomic layer deposition
K1 Doping profiles
K1 Vth mismatch
K1 Retrograde doping
K1 Undoped epitaxial channel
K1 Transient enhanced diffusion
SP 1
OP 4
LK http://dx.doi.org/https://doi.org/10.1109/IPFA49335.2020.9260584
DO https://doi.org/10.1109/IPFA49335.2020.9260584
SF ELIB - SuUB Bremen

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