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1 Ergebnisse
1
Noninvasive Backside Circuit Edit Workflow using Low-kV STI..:
, In:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Haimson, Or
;
Goldman, Roy
;
Wong, Michael
... - p. 1-4 , 2020
Link:
https://doi.org/10.1109/IPFA49335.2020.9260664
RT T1
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
: T1
Noninvasive Backside Circuit Edit Workflow using Low-kV STI Exposure
UL https://suche.suub.uni-bremen.de/peid=ieee-9260664&Exemplar=1&LAN=DE A1 Haimson, Or A1 Goldman, Roy A1 Wong, Michael A1 Sidorov, Oleg A1 Donnet, David A1 Tien, David A1 Ahlgren, Debbora A1 Leslie, Neel A1 Jensen, Jake YR 2020 SN 1946-1550 K1 FinFETs K1 Ions K1 Logic gates K1 Performance evaluation K1 Laser beams K1 Silicon K1 Integrated circuit modeling K1 Circuit Edit K1 Gallium LMIS K1 Focused Ion Beam K1 Low-Beam Energy K1 Workflow K1 Success rate SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IPFA49335.2020.9260664 DO https://doi.org/10.1109/IPFA49335.2020.9260664 SF ELIB - SuUB Bremen
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