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1 Ergebnisse
1
Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC..:
, In:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Wang, Yun-Ju
;
Huang, Yi-Ting
;
Tsui, Bing-Yue
. - p. 1-4 , 2020
Link:
https://doi.org/10.1109/IPFA49335.2020.9260714
RT T1
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
: T1
Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes
UL https://suche.suub.uni-bremen.de/peid=ieee-9260714&Exemplar=1&LAN=DE A1 Wang, Yun-Ju A1 Huang, Yi-Ting A1 Tsui, Bing-Yue A1 Chien, Chao-Hsin YR 2020 SN 1946-1550 K1 Logic gates K1 Annealing K1 Silicon carbide K1 Oxidation K1 Electric fields K1 Silicon K1 Photonic band gap K1 4H-SiC K1 gate oxide K1 time-dependent dielectric breakdown K1 isolation SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IPFA49335.2020.9260714 DO https://doi.org/10.1109/IPFA49335.2020.9260714 SF ELIB - SuUB Bremen
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