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Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
Wang, Yun-Ju ; Huang, Yi-Ting ; Tsui, Bing-Yue. - p. 1-4 , 2020
Link: https://doi.org/10.1109/IPFA49335.2020.9260714