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1 Ergebnisse
1
On the Mechanism of High Forward Voltage of InGaN Light Emi..:
, In:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Dawood, M. K.
;
Yang, Y.
;
Kon, C.
... - p. 1-6 , 2020
Link:
https://doi.org/10.1109/IPFA49335.2020.9260949
RT T1
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
: T1
On the Mechanism of High Forward Voltage of InGaN Light Emitting Diodes
UL https://suche.suub.uni-bremen.de/peid=ieee-9260949&Exemplar=1&LAN=DE A1 Dawood, M. K. A1 Yang, Y. A1 Kon, C. A1 James, S. A1 Yong, A. A1 Luo, X. A1 Tan, C. K. A1 Quek, P. S. A1 Teo, K. A1 Huh, S. YR 2020 SN 1946-1550 K1 Light emitting diodes K1 Resistance K1 Hydrogen K1 Gallium nitride K1 Semiconductor diodes K1 Fabrication K1 Epitaxial growth K1 LED K1 GaN K1 high forward voltage K1 high resistance K1 FIB K1 ToF-SIMS K1 TEM SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IPFA49335.2020.9260949 DO https://doi.org/10.1109/IPFA49335.2020.9260949 SF ELIB - SuUB Bremen
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