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1 Ergebnisse
1
Effect of Cu barrier from TaN/Ta Deposition barrier(DD) & T..:
, In:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Liao, Yun-Chi
;
Sung, Hui-Lan
;
Wang, Wei-Lin
- p. 1-4 , 2020
Link:
https://doi.org/10.1109/IPFA49335.2020.9261015
RT T1 <cTitle>2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)</cTitle>: T1 <Title>Effect of Cu barrier from TaN/Ta Deposition barrier(DD) & TaN/Etching/Ta Deposition barrier(DED) on Cu EM reliability</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9261015&Exemplar=1&LAN=DE A1 Liao, Yun-Chi A1 Sung, Hui-Lan A1 Wang, Wei-Lin YR 2020 SN 1946-1550 K1 Electromigration K1 Copper K1 Metallization K1 Materials reliability K1 Current density K1 Tensile stress K1 Standards K1 electromigration K1 copper metallization K1 interconnect K1 dual damascene K1 Cu barrier K1 reliability SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IPFA49335.2020.9261015 DO https://doi.org/10.1109/IPFA49335.2020.9261015 SF ELIB - SuUB Bremen
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