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1 Ergebnisse
1
Effects of X-ray Irradiation on Vertical GaN-on-GaN Schottk..:
, In:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Li, Xiao-Xi
;
Chen, Jin-Xin
;
Huang, Wei
... - p. 1-4 , 2020
Link:
https://doi.org/10.1109/IPFA49335.2020.9261085
RT T1
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
: T1
Effects of X-ray Irradiation on Vertical GaN-on-GaN Schottky Barrier Diode Biased on the Applied Voltage
UL https://suche.suub.uni-bremen.de/peid=ieee-9261085&Exemplar=1&LAN=DE A1 Li, Xiao-Xi A1 Chen, Jin-Xin A1 Huang, Wei A1 Ji, Zhigang A1 Feng, Zhi-Hong A1 Wu, Su-Zhen A1 Xiao, Zhi-Qiang A1 Lu, Hong-Liang YR 2020 SN 1946-1550 K1 Gallium nitride K1 Radiation effects K1 Substrates K1 Schottky diodes K1 Leakage currents K1 X-ray scattering K1 X-ray diffraction K1 GaN-on-GaN K1 SBD K1 X-ray K1 I- V SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IPFA49335.2020.9261085 DO https://doi.org/10.1109/IPFA49335.2020.9261085 SF ELIB - SuUB Bremen
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