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1 Ergebnisse
1
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosh..:
, In:
2020 IEEE Symposium on VLSI Technology
,
Huang, Yu-Shiang
;
Lu, Fang-Liang
;
Tu, Chien-Te
... - p. 1-2 , 2020
Link:
https://doi.org/10.1109/VLSITechnology18217.2020.92650..
RT T1
2020 IEEE Symposium on VLSI Technology
: T1
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels
UL https://suche.suub.uni-bremen.de/peid=ieee-9265056&Exemplar=1&LAN=DE A1 Huang, Yu-Shiang A1 Lu, Fang-Liang A1 Tu, Chien-Te A1 Chen, Jyun-Yan A1 Tsai, Chung-En A1 Ye, Hung-Yu A1 Liu, Yi-Chun A1 Liu, C. YR 2020 SN 2158-9682 K1 Germanium K1 Etching K1 Silicon K1 Wet etching K1 Resistance K1 Very large scale integration K1 Nanoscale devices SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnology18217.2020.9265056 DO https://doi.org/10.1109/VLSITechnology18217.2020.9265056 SF ELIB - SuUB Bremen
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