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1 Ergebnisse
1
An Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device wi..:
, In:
2020 IEEE Symposium on VLSI Technology
,
Du, Pei-Ying
;
Lue, Hang-Ting
;
Yeh, Teng-Hao
... - p. 1-2 , 2020
Link:
https://doi.org/10.1109/VLSITechnology18217.2020.92650..
RT T1
2020 IEEE Symposium on VLSI Technology
: T1
An Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device with Large Vt Memory Window $( > 10\mathrm{V})$ and Excellent 100K Endurance
UL https://suche.suub.uni-bremen.de/peid=ieee-9265078&Exemplar=1&LAN=DE A1 Du, Pei-Ying A1 Lue, Hang-Ting A1 Yeh, Teng-Hao A1 Hsu, Tzu-Hsuan A1 Chen, Wei-Chen A1 Huang, Chia-Tze A1 Lee, Guan-Ru A1 Hung, Min-Feng A1 Chiu, Chia-Jung A1 Wang, Keh-Chung A1 Lu, Chih-Yuan YR 2020 SN 2158-9682 K1 Three-dimensional displays K1 Programming K1 Performance evaluation K1 Logic gates K1 Standards K1 Solid modeling K1 Interference SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnology18217.2020.9265078 DO https://doi.org/10.1109/VLSITechnology18217.2020.9265078 SF ELIB - SuUB Bremen
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