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1 Ergebnisse
1
A Comparison Study of Velocity Saturation Models for Gate-a..:
, In:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
,
Zhong, Haotian
;
Rong, Zhao
;
Huang, Xiaoqing
... - p. 1-3 , 2020
Link:
https://doi.org/10.1109/ICSICT49897.2020.9278020
RT T1
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
: T1
A Comparison Study of Velocity Saturation Models for Gate-all-around MOSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-9278020&Exemplar=1&LAN=DE A1 Zhong, Haotian A1 Rong, Zhao A1 Huang, Xiaoqing A1 Chen, Yihan A1 Zhang, Lining A1 Lin, Xinnan YR 2020 K1 Semiconductor device modeling K1 Integrated circuit modeling K1 Two dimensional displays K1 Solid modeling K1 MOSFET K1 Gallium arsenide K1 Benchmark testing SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT49897.2020.9278020 DO https://doi.org/10.1109/ICSICT49897.2020.9278020 SF ELIB - SuUB Bremen
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