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1 Ergebnisse
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Materials and Defect Aspects of III-V and III-N Devices for..:
, In:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
,
Simoen, Eddy
;
Hsu, Po-Chun Brent
;
Yu, Hao
... - p. 1-4 , 2020
Link:
https://doi.org/10.1109/ICSICT49897.2020.9278262
RT T1
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
: T1
Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications
UL https://suche.suub.uni-bremen.de/peid=ieee-9278262&Exemplar=1&LAN=DE A1 Simoen, Eddy A1 Hsu, Po-Chun Brent A1 Yu, Hao A1 Wang, Hongyue A1 Zhao, Ming A1 Takakura, Kenichiro A1 Putcha, Vamsi A1 Peralagu, Uthayasankaran A1 Parvais, Bertrand A1 Waldron, Niamh A1 Collaert, Nadine YR 2020 K1 Electron traps K1 Gallium nitride K1 Substrates K1 Spectroscopy K1 Logic gates K1 Windows K1 Silicon SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT49897.2020.9278262 DO https://doi.org/10.1109/ICSICT49897.2020.9278262 SF ELIB - SuUB Bremen
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