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1 Ergebnisse
1
Influence of Gate-Drain Underlap Length on Germanium Gate-A..:
, In:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
,
Wei, Kai-Xiao
;
Li, Xiao-Jin
;
Sun, Ya-Bin
. - p. 1-3 , 2020
Link:
https://doi.org/10.1109/ICSICT49897.2020.9278269
RT T1
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
: T1
Influence of Gate-Drain Underlap Length on Germanium Gate-All-Around Tunneling Field-Effect-Transistors
UL https://suche.suub.uni-bremen.de/peid=ieee-9278269&Exemplar=1&LAN=DE A1 Wei, Kai-Xiao A1 Li, Xiao-Jin A1 Sun, Ya-Bin A1 Shi, Yan-Ling YR 2020 K1 Logic gates K1 Inverters K1 Tunneling K1 Capacitance K1 Germanium K1 Propagation delay K1 Junctions SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT49897.2020.9278269 DO https://doi.org/10.1109/ICSICT49897.2020.9278269 SF ELIB - SuUB Bremen
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