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1 Ergebnisse
1
Analysis of ESD Effect and Ionizing Radiation Particles in ..:
, In:
2020 China Semiconductor Technology International Conference (CSTIC)
,
Chen, C.-Z.
;
Hu, David Y.
;
Wu, Hanming
- p. 1-3 , 2020
Link:
https://doi.org/10.1109/CSTIC49141.2020.9282445
RT T1
2020 China Semiconductor Technology International Conference (CSTIC)
: T1
Analysis of ESD Effect and Ionizing Radiation Particles in Gate Oxide
UL https://suche.suub.uni-bremen.de/peid=ieee-9282445&Exemplar=1&LAN=DE A1 Chen, C.-Z. A1 Hu, David Y. A1 Wu, Hanming YR 2020 K1 Protons K1 Ionizing radiation K1 Logic gates K1 Electrostatic discharges K1 Threshold voltage K1 Interface states K1 Transistors K1 electro-static discharge (ESD) K1 charged device model (CDM) K1 ionizing radiation K1 stopping power K1 linear energy transfer (LET) K1 mean free path (MFP) K1 radiation hardening (RadHard) K1 total ionizing dose (TID) K1 single event effects (SEE) SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/CSTIC49141.2020.9282445 DO https://doi.org/10.1109/CSTIC49141.2020.9282445 SF ELIB - SuUB Bremen
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