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1 Ergebnisse
1
Improved Temperature Estimation Model of 4H-SiC MOSFET unde..:
, In:
2020 4th International Conference on HVDC (HVDC)
,
Yu, Renze
;
Li, Hui
;
Zhong, Yi
... - p. 874-879 , 2020
Link:
https://doi.org/10.1109/HVDC50696.2020.9292675
RT T1 <cTitle>2020 4th International Conference on HVDC (HVDC)</cTitle>: T1 <Title>Improved Temperature Estimation Model of 4H-SiC MOSFET under Avalanche Condition</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9292675&Exemplar=1&LAN=DE A1 Yu, Renze A1 Li, Hui A1 Zhong, Yi A1 Lai, Wei A1 Wang, Xiao A1 Yao, Ran A1 Liu, Renkuan A1 Yu, Yue YR 2020 K1 Silicon carbide K1 MOSFET K1 Semiconductor device modeling K1 Thermal conductivity K1 Heating systems K1 Computational modeling K1 Capacitance K1 avalanche breakdown K1 Cauer thermal network K1 SiC MOSFET K1 TCAD K1 temperature-dependent parameters SP 874 OP 879 LK http://dx.doi.org/https://doi.org/10.1109/HVDC50696.2020.9292675 DO https://doi.org/10.1109/HVDC50696.2020.9292675 SF ELIB - SuUB Bremen
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