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1 Ergebnisse
1
A Method to Model the Volume Charge Density in a Multiple-I..:
, In:
2020 17th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)
,
Plascencia Jauregui, Francisco
;
Medina Vazquez, Santiago
;
Becerra Alvarez, Edwin
.. - p. 1-6 , 2020
Link:
https://doi.org/10.1109/CCE50788.2020.9299156
RT T1 <cTitle>2020 17th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)</cTitle>: T1 <Title>A Method to Model the Volume Charge Density in a Multiple-Input Floating-Gate MOS Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9299156&Exemplar=1&LAN=DE A1 Plascencia Jauregui, Francisco A1 Medina Vazquez, Santiago A1 Becerra Alvarez, Edwin A1 Arce Zavala, Jose A1 Ruiz, Sandra Flores YR 2020 SN 2642-3766 K1 Logic gates K1 Electric potential K1 Transistors K1 Substrates K1 Solid modeling K1 Mathematical model K1 Voltage control K1 MIFGMOS K1 Electric Field K1 Volume Charge Density K1 Poisson's Equation SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/CCE50788.2020.9299156 DO https://doi.org/10.1109/CCE50788.2020.9299156 SF ELIB - SuUB Bremen
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