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1 Ergebnisse
1
Development of 1 eV InGaAsN PIN subcell for MJSC integratio..:
, In:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
,
Levillayer, Maxime
;
Massiot, Ines
;
Arnoult, Alexandre
... - p. 0473-0475 , 2020
Link:
https://doi.org/10.1109/PVSC45281.2020.9300570
RT T1 <cTitle>2020 47th IEEE Photovoltaic Specialists Conference (PVSC)</cTitle>: T1 <Title>Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9300570&Exemplar=1&LAN=DE A1 Levillayer, Maxime A1 Massiot, Ines A1 Arnoult, Alexandre A1 Fontaine, Chantal A1 Duzellier, Sophie A1 Nuns, Thierry A1 Inguimbert, Christophe A1 Aicardi, Corinne A1 Carrere, Helene A1 Parola, Stephanie A1 Artola, Laurent A1 Almuneau, Guilhem YR 2020 K1 Photovoltaic cells K1 Molecular beam epitaxial growth K1 Gallium arsenide K1 Annealing K1 Temperature measurement K1 Surfactants K1 Substrates K1 InGaAsN K1 1 eV cell K1 MJSC K1 dilute nitride K1 space applications SP 0473 OP 0475 LK http://dx.doi.org/https://doi.org/10.1109/PVSC45281.2020.9300570 DO https://doi.org/10.1109/PVSC45281.2020.9300570 SF ELIB - SuUB Bremen
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