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Effect of Dopant Compensation on the Conductivity of the In..:
, In:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
,
Hartenstein, Matthew B.
;
Harvey, Steve
;
Page, Matthew
... - p. 2751-2753 , 2020
Link:
https://doi.org/10.1109/PVSC45281.2020.9300769
RT T1 <cTitle>2020 47th IEEE Photovoltaic Specialists Conference (PVSC)</cTitle>: T1 <Title>Effect of Dopant Compensation on the Conductivity of the Intrinsic poly-Si Isolation Region in Passivated IBC Silicon Solar Cells</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9300769&Exemplar=1&LAN=DE A1 Hartenstein, Matthew B. A1 Harvey, Steve A1 Page, Matthew A1 Young, David A1 Stradins, Paul A1 Agarwal, Sumit YR 2020 K1 Fingers K1 Conductivity K1 Resistance K1 Silicon K1 Semiconductor process modeling K1 Resistors K1 Pollution measurement K1 interdigitated back contact K1 passivated contacts K1 silicon solar cells K1 simulations SP 2751 OP 2753 LK http://dx.doi.org/https://doi.org/10.1109/PVSC45281.2020.9300769 DO https://doi.org/10.1109/PVSC45281.2020.9300769 SF ELIB - SuUB Bremen
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