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1 Ergebnisse
1
Raman Scattering Method to Measure and Improve the GaN Epit..:
, In:
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)
,
Lee, Chen-Che
;
Lee, Hsin-Che
;
Lee, Hsin-Jung
.. - p. 149-151 , 2020
Link:
https://doi.org/10.1109/ECICE50847.2020.9301986
RT T1
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)
: T1
Raman Scattering Method to Measure and Improve the GaN Epitaxial layer of HEMT
UL https://suche.suub.uni-bremen.de/peid=ieee-9301986&Exemplar=1&LAN=DE A1 Lee, Chen-Che A1 Lee, Hsin-Che A1 Lee, Hsin-Jung A1 Lee, Wei-Yu A1 Chuang, Wei-Ching YR 2020 K1 Gallium nitride K1 III-V semiconductor materials K1 Aluminum nitride K1 HEMTs K1 Substrates K1 Stress K1 Crystals K1 HEMT K1 epitaxial GaN K1 dislocation density K1 Raman scattering K1 AlN buffer layer SP 149 OP 151 LK http://dx.doi.org/https://doi.org/10.1109/ECICE50847.2020.9301986 DO https://doi.org/10.1109/ECICE50847.2020.9301986 SF ELIB - SuUB Bremen
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