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1 Ergebnisse
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Fabrication and dynamic switching characteristics of 6.5kV4..:
, In:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
,
Yujie, DU
;
Cui, LI
;
Xinling, TANG
... - p. 67-70 , 2020
Link:
https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308673
RT T1 <cTitle>2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)</cTitle>: T1 <Title>Fabrication and dynamic switching characteristics of 6.5kV400A SiC MOSFET module</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9308673&Exemplar=1&LAN=DE A1 Yujie, DU A1 Cui, LI A1 Xinling, TANG A1 Fei, YANG A1 Junmin, WU A1 Shiyan, LI A1 Xiaoxing, JIN A1 Junming, ZHANG YR 2020 K1 Silicon carbide K1 MOSFET K1 Silicon K1 Insulated gate bipolar transistors K1 Switches K1 Transient analysis K1 Resistance SP 67 OP 70 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308673 DO https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308673 SF ELIB - SuUB Bremen
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